Placing a sensor close to the target at the nano-level is a central challenge in quantum sensing. We demonstrate magnetic field imaging with a boron vacancy (⁠ V⁻_B⁠) defects array in hexagonal boron nitride with a few 10 nm thickness. V⁻_B sensor spots with a size of (100 nm)² are arranged periodically with nanoscale accuracy using a helium ion microscope and attached tightly to a gold wire. The sensor array allows us to visualize the magnetic field induced by the current in the straight micro wire with a high spatial resolution. Each sensor exhibits a practical sensitivity of 73.6 μT/Hz^0.5⁠, suitable for quantum materials research. Our technique of arranging V⁻_B quantum sensors periodically and tightly on measurement targets will maximize their potential.

See below for more information.

• Aritcle URL : https://pubs.aip.org/aip/apl/article/122/24/244003/2896134/Magnetic-field-imaging-by-hBN-quantum-sensor
• Kobayashi Lab. : https://meso.phys.s.u-tokyo.ac.jp/en/